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Article: German Inventors Develop Semiconductor Power Device
- Article from:
- US Fed News Service, Including US State News
- Article date:
- March 15, 2008
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ALEXANDRIA, Va., March 15 -- Dirk Ahlers, Miguel Cuadron Marion and Uwe Wahl, all from Munchen, Germany, and Armin Willmeroth of Augsburg, Germany, have developed a semiconductor device with charge compensation structure.
According to the U.S. Patent & Trademark Office: "The invention relates to a semiconductor power device with charge compensation structure and monolithic integrated circuit, and method for fabricating it. In the case of this semiconductor power device, zones in charge compensation cells that are arranged vertically and doped complimentarily to the semiconductor chip volume are arranged in the entire chip volume, the complimentarily doped zones extending right into ...
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Article: Japanese Inventors Develop Semiconductor Power ...
US Fed News Service, Including US State News;
December 15, 2006 ;
513 words
... ... of Toyohashi, Japan, and Chikage Noritake of Ama-gun, Japan, have developed a method for manufacturing semiconductor power device. According to the U.S. Patent & Trademark Office: "A semiconductor device, which has a relatively ...
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