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Article: Arizona Inventors Develop Radio-Frequency Integrated Circuit
- Article from:
- US Fed News Service, Including US State News
- Article date:
- April 4, 2008
CopyrightCopyright © HT Media Ltd. All Rights Reserved. Provided by ProQuest LLC. (Hide copyright information)
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ALEXANDRIA, Va., April 4 -- Elizabeth C. Glass of Gilbert, Ariz., Olin L. Hartin of Chandler, Ariz., Ngai Ming Lau of Fountain Hills, Ariz., and Neil T. Tracht of Mesa, Ariz., have developed a mode field-effect transistor.
According to the U.S. Patent & Trademark Office: "Methods and apparatus are provided for radio-frequency (RF) switches integrated in a monolithic RF transceiver integrated circuit and switched gain amplifier. Multi-gate n-channel enhancement mode field effect transistors (FETs) are used with single gate FETs, resistors and capacitors formed by the same manufacturing process. The multiple gates of the FETs are parallel coupled, spaced-apart and serially arranged ...
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Article: DOT Rule on Modification of Class E Airspace at Tucson, ...
US Fed News Service, Including US State News;
May 16, 2008 ;
299 words
...US Fed News WASHINGTON, May 16 -- The Senate Commerce ... Modification of Class E Airspace; Tucson, Ariz." The document (RIN2120-AA66)(Docket ... information about this report, contact US Fed News through its Washington, D.C.-area ...
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