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Article: Connecticut Inventor Develops Semiconductor Structure Formation Method
- Article from:
- US Fed News Service, Including US State News
- Article date:
- April 14, 2008
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ALEXANDRIA, Va., April 14 -- Dureseti Chidambarrao of Weston, Conn., has developed a method for forming a semiconductor structure.
According to the U.S. Patent & Trademark Office: "A semiconductor structure and its method of fabrication utilize a semiconductor substrate having an active region mesa surrounded by an isolation trench. A first isolation region having a first stress is located in the isolation trench. A second isolation region having a second stress different than the first stress is also located in the isolation trench. The first isolation region and the second isolation region are sized and positioned to rotationally shear stress the active region mesa."
The inventor was ...
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Article: Idaho Inventors Develop Trench Isolation Region ...
US Fed News Service, Including US State News;
October 23, 2007 ;
525 words
... ... Oct. 23 -- Garo J. Derderian of Boise, Idaho, and H. Montgomery Manning of Eagle, Idaho, have developed a trench isolation region formation method. According to the U.S. Patent & Trademark Office: "The invention includes methods of forming ...
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