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Article: Italian Inventors Develop Semiconductor Memory Device
- Article from:
- US Fed News Service, Including US State News
- Article date:
- April 20, 2008
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ALEXANDRIA, Va., April 20 -- Marco Sforzin of Cantu', Italy, Emanuele Confalonieri of Milan, Italy, Nicola Del Gatto of Torre Del Greco, Italy, and Carla Giuseppina Poidomani of Cassina De' Pecchi, Italy, have developed a semiconductor memory device.
According to the U.S. Patent & Trademark Office: "The semiconductor memory device includes a memory matrix having a plurality of memory cells arranged according to a plurality of rows and a plurality of columns and a plurality of bit lines, each bit line being associated with at least one respective column of said plurality. The semiconductor memory device further includes a bit line selection structure for selecting at least one among said ...