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Article: Japanese Inventor Develops Isolation Insulation Film
- Article from:
- US Fed News Service, Including US State News
- Article date:
- April 22, 2008
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ALEXANDRIA, Va., April 22 -- Yoshitaka Fujiishi of Tokyo has developed a semiconductor device.
According to the U.S. Patent & Trademark Office: "An isolation insulation film is formed in an isolation trench in an upper portion of a silicon substrate. The isolation insulation film has an opening by which inner walls and bottom of the isolation trench are exposed. A lower diffusion layer serving as a lower electrode of capacitors of dynamic random access memory cells extends into the inner walls of the isolation trench exposed by the opening, and a dielectric layer is formed in almost constant thickness on the inner walls and bottom of the isolation trench exposed by the opening. An upper ...
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Article: Texas Inventors Develop Isolation Trench Perimeter Implant
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341 words
......James D. Burnett, both of Austin, Texas, have developed an isolation trench perimeter implant for threshold voltage control. According...region underlying the second area is etched to form an isolation trench that is then filled with a dielectric. The spacers are...
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