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California Inventor Develops Semiconductor Device Recessed Structure Filling Process
- Article from:
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US Fed News Service, Including US State News
- Article date:
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June 16, 2008
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ALEXANDRIA, Va., June 16 -- Prasad N. Gadgil of Santa Clara, Calif., has developed a semiconductor recessed structure filling method.
An abstract of the invention, released by the U.S. Patent & Trademark Office, said: "The invention relates to process sequence by high-speed atomic layer chemical vapor processing that includes deposition for diffusion barriers in the etched features on substrate followed by gap fill and subsequent in-situ removal of the blanket films on the top by plasma enhanced vapor phase processes. The apparatus and process sequences employed in these processing scheme allows the practitioner to complete all vapor phase process sequences of diffusion barrier ...
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