South Korean Inventor Develops Organic Light Emission Display

US Fed News Service, Including US State News;  September 3, 2008 ;     326 words ......includes: growing a single crystalline silicon layer to a predetermined thickness...buffer layer on the single crystalline silicon layer; forming a partition...predetermined depth in the single crystalline silicon layer by, e.g., implanting...

Oregon Inventor Develops Strained Silicon On Silicon Germanium Structure

US Fed News Service, Including US State News;  July 4, 2008 ;     264 words ......heat treated to regrow a crystalline silicon layer over a resulting silicon...epitaxial process. The crystalline silicon layer is strained by a lattice...germanium layer and the crystalline silicon layer. Other aspects are provided...

South Korean Inventors Develop Poly Crystalline Silicon Semiconductor...

US Fed News Service, Including US State News;  August 21, 2008 ;     246 words ......Office: "Provided are a poly crystalline silicon semiconductor device and...fabricating the same. Portions of a silicon layer except for gates are removed...prevented. Accordingly, the poly crystalline silicon semiconductor device, such...

South Korean Inventors Develop Poly Crystalline Silicon Type Thin Film...

US Fed News Service, Including US State News;  November 10, 2006 ;     253 words ......Korea, have developed a method of fabricating poly crystalline silicon type thin film transistor. According to the U...oxygen atom into the surface part of the amorphous silicon layer. By this addition of step, the surface part of the silicon layer is to be oxidized and the crystal ...

U.S. Patents Awarded to Inventors in Oregon (July 4)

Targeted News Service;  July 4, 2008 ;     700+ words ......heat treated to regrow a crystalline silicon layer over a resulting silicon...epitaxial process. The crystalline silicon layer is strained by a lattice...germanium layer and the crystalline silicon layer. Other aspects are provided...

Massachusetts Inventors Develop Tunable Optical Filter

US Fed News Service, Including US State News;  December 6, 2007 ;     198 words ......optical device including: a glass substrate; a crystalline silicon layer bonded to the glass substrate; and a thermally...thin-film optical filter fabricated on top of the crystalline silicon layer." The inventors were issued U.S. Patent No...

Japanese Inventors Develop Charge Pump Device

US Fed News Service, Including US State News;  October 23, 2007 ;     265 words ......current capacity can be increased. An N-type epitaxial silicon layer is formed on a P-type single crystalline silicon substrate, P-type well regions are formed in the N-type epitaxial silicon layer separated from each other, and P-type lower isolation...each of the P-type well ...

Taiwan Inventor Develops Polycrystalline Silicon Layer

US Fed News Service, Including US State News;  November 8, 2006 ;     226 words ......process for forming a polycrystalline silicon layer. According to the U.S. Patent &...process for forming a polycrystalline silicon layer includes the following steps. Firstly...on a substrate. Then, an amorphous silicon layer is formed on the substrate and overlies...

Taiwanese Inventor Develops Polysilicon Film Fabrication Method

US Fed News Service, Including US State News;  October 7, 2006 ;     286 words ......method of fabricating polycrystalline silicon layer of thin film transistor. According...insulating layer, a first amorphous silicon layer, and a cap layer on a substrate. A...performed to transform the first amorphous silicon layer to a first polycrystalline silicon...

Taiwanese Inventors Develop Poly Silicon Layer Fabrication System

US Fed News Service, Including US State News;  November 17, 2008 ;     304 words ......developed a method for fabricating poly silicon layer. According to the abstract released...Office: "A method of fabricating a poly silicon layer comprising the following steps is provided...substrate is provided and an amorphous silicon layer is formed on the substrate. A ...

Taiwanese Inventor Develops Silicon on Insulator Single Crystalline Chip...

US Fed News Service, Including US State News;  February 7, 2007 ;     254 words ......chip structure with multi-thickness silicon layer. According to the U.S. Patent &...The SOI chip structure has a first silicon layer for at least one SOI device to be placed...predetermined position of the first silicon layer in order to enable the first silicon...

Taiwanese Inventors Develop Uniform Silicon Layer Etching Method

US Fed News Service, Including US State News;  September 26, 2007 ;     270 words ......Taiwan, have developed an uniform silicon layer etching method. According to the U...relates to a "method of etching a silicon layer to avoid non-uniformity. First, a patterned silicon layer is provided. Next, an etching buffer...

South Korean Inventor Develops Silicon Layer Crystallization Variable Mask...

US Fed News Service, Including US State News;  October 3, 2008 ;     281 words ......developed a method for crystallizing silicon layer. According to the abstract released...variable mask device for crystallizing a silicon layer capable of controlling a width and...aligned through the opening and the silicon layer formed on the substrate is irradiated...

Japanese Inventors Develop Semiconductor Substrate

US Fed News Service, Including US State News;  November 15, 2007 ;     260 words ......which comprises a first single crystal silicon layer, an insulator formed to partially cover one main surface of the first single crystal silicon layer, a second single crystal silicon layer formed to cover a region of the first...

South Korean Inventor Develops Polycrystalline Silicon Layer Formation...

US Fed News Service, Including US State News;  August 17, 2006 ;     237 words ......of forming a polycrystalline silicon layer. According to the U.S. Patent...Trademark Office: "An amorphous silicon layer on a substrate is completely...as to form a polycrystalline silicon layer. The upper portion of the polycrystalline...