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South Korean Inventors Develop Carbon Nanotube Memory Device
- Article from:
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US Fed News Service, Including US State News
- Article date:
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July 3, 2008
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Copyright informationCopyright © HT Media Ltd. All Rights Reserved. Provided by ProQuest LLC. (Hide copyright information)
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ALEXANDRIA, Va., July 3 -- Won-bong Choi of Yongin, South Korea, In-kyeong Yoo of Suwon, South Korea, and Jae-uk Chu of Gwangmyeong, South Korea, have developed a method of fabricating the memory device.
According to the U.S. Patent & Trademark Office: "A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a ...
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