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Japanese Inventors Develop Silicon Compound Film with Crystallinity
- Article from:
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US Fed News Service, Including US State News
- Article date:
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July 7, 2008
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ALEXANDRIA, Va., July 7 -- Shunpei Yamazaki of Tokyo, and Hisashi Ohtani of Kanagawa, Japan, have developed a silicon film having crystallinity.
According to the U.S. Patent & Trademark Office: "A mask is formed selectively on a crystalline silicon film containing a catalyst element, and an amorphous silicon film is formed so as to cover the mask. Phosphorus is implanted into the amorphous silicon film and the portion of the crystalline silicon film which is not covered with the mask. The silicon films are then heated by rapid thermal annealing. By virtue of the existence of the amorphous silicon film, the temperature of the crystalline silicon film is increased uniformly, whereby the ...
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