Taiwanese Inventors Develop Semiconductor Structure Forming Method

US Fed News Service, Including US State News;  January 7, 2008 ;     313 words ......layer and forming a structure in the low-k dielectric layer includes depositing a low-k dielectric layer over a substrate, performing a first treatment to the low-k dielectric layer, performing post-formation processes...

California Inventors Develop Dielectric Film Post-Etch Deposition Method

US Fed News Service, Including US State News;  July 11, 2008 ;     284 words ......providing a substrate having a low-k dielectric layer disposed thereon in a etch reactor, etching the low-k dielectric layer in the etch reactor, and...protection layer on the etched low-k dielectric layer. In another embodiment...

California Inventors Develop Low Dielectric Constant Dielectric Layer

US Fed News Service, Including US State News;  June 12, 2007 ;     251 words ......feature in a low dielectric constant (low-k) dielectric layer. According to the U.S. Patent &...A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned...

Singapore Inventors Develop Copper Damascene Interconnect Fabrication...

US Fed News Service, Including US State News;  March 8, 2007 ;     331 words ......A lower low dielectric constant (low-k) dielectric layer is formed over the dielectric barrier...the Patent Office, said: "An upper low-k dielectric layer is formed over the lower low-k dielectric layer. An Silicon-rich ...

Taiwanese Inventor Develops Dual Damascene Process

US Fed News Service, Including US State News;  November 1, 2007 ;     273 words ......interconnect comprises deposition of a first low-k dielectric layer, etching of the first low-k dielectric layer to form two dual damascene vias, formation...filled in the trench. The spin-on low-k dielectric layer is selected to have a ...

Taiwanese Inventors Develop Semiconductor Interconnect Structure Formation...

US Fed News Service, Including US State News;  August 18, 2008 ;     234 words ......feature is then formed in the low-k dielectric layer. A cap layer is formed overlying the low-k dielectric layer, and the conductive feature and the low-k dielectric layer is then subjected to an...

California Inventors Develop Materials Damage Prevention Method

US Fed News Service, Including US State News;  July 26, 2008 ;     248 words ......forming a feature in a low-constant (low-k) dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into...

Singapore Inventors Develop Low Dielectric Constant Dielectric Layer...

US Fed News Service, Including US State News;  June 14, 2007 ;     312 words ......low dielectric constant (low-k) dielectric layer. According to the U.S. Patent...exposing a portion of the low-k dielectric layer to a plasma of a process...be used to over etch the low-k dielectric layer to provide improved ...

Taiwanese Inventors Develop Ultraviolet Treatment Method

US Fed News Service, Including US State News;  October 4, 2008 ;     222 words ......treatment for making a low-k dielectric layer having improved properties in a damascene structure. A low-k dielectric layer in a damascene structure...exposed surfaces of the low-k dielectric layer." The inventors were issued...

California Inventors Develop Porous Low-K Materials Damage Prevention...

US Fed News Service, Including US State News;  July 27, 2006 ;     237 words ......forming a feature in a porous low-K dielectric layer. According to the U.S. Patent...Trademark Office: "A porous low-K dielectric layer is placed over a substrate...is placed over the porous low-K dielectric layer. A feature is etched into...

Idaho Inventor Develops Low-k Dielectric Film Dissolution Method

US Fed News Service, Including US State News;  October 7, 2008 ;     318 words ......selectively remove a low-k dielectric material such as silicon...photoresist layer overlying a low-k dielectric layer, or both layers from...removal rate of the low-k dielectric and/or photoresist...to achieve a desired low-k ...

Idaho Inventor Develops Semiconductor Wafer Surface Cleaning Method

US Fed News Service, Including US State News;  September 22, 2008 ;     325 words ......selectively remove a low-k dielectric material such as silicon...photoresist layer overlying a low-k dielectric layer, or both layers from...removal rate of the low-k dielectric and/or photoresist...to achieve a desired low-k ...

Idaho Inventor Develops Dielectric Films Dissolution Compositions

US Fed News Service, Including US State News;  January 2, 2008 ;     324 words ......remove a low-constant (low-k) dielectric material such as silicon...photoresist layer overlying a low-k dielectric layer, or both layers from...removal rate of the low-k dielectric and/or photoresist...to achieve a desired low-k ...

South Korean Inventors Develop Multi-Thickness Gate Dielectric Layer...

US Fed News Service, Including US State News;  February 24, 2007 ;     368 words ......manufacturing multi-thickness gate dielectric layer of semiconductor device. According...manufacturing a multi-thickness gate dielectric layer of a semiconductor device, a first dielectric layer is formed on a semiconductor substrate...

Oregon Inventors Develop Zeolite Low-k Dielectric Layer Pores Impregnating...

US Fed News Service, Including US State News;  December 8, 2007 ;     210 words ......method for impregnating the pores of a zeolite low-k dielectric layer with a polymer, and forming an interconnect structure therein, thus mechanically strengthening the dielectric layer and preventing metal deposits within the pores...