Article: Idaho Inventors Develop Trench Isolation Region Formation Method

Article: Idaho Inventors Develop Trench Isolation Region Formation Method
US Fed News Service, Including US State News;  October 23, 2007 ;     319 words ......Idaho, have developed a trench isolation region formation method...methods of forming trench isolation regions. In one implementation, a masking material is formed over a semiconductor...Patent Office, said: "A trench isolation material is formed...trench and over the ...

Article: U.S. Patents Awarded to Inventors in Idaho (Aug. 1)
Targeted News Service;  August 1, 2008 ;     700+ words ......Inventors Develop Trench Isolation Region Formation...Idaho, have developed trench isolation regions.According...methods of forming trench isolation regions. In one implementation, a masking material is formed over a...semiconductor substrate. The masking ...

Article: Michigan Inventors Develop Renewable Masking Surface Providing Method
US Fed News Service, Including US State News;  December 28, 2006 ;     274 words ......that includes a supply roll of masking material, supported by a first roll support...roll support, which allows the masking material to be dispensed. A take-up roll is provided to receive masking material after it has been used." An...

Article: Japanese Inventors Develop Pattern Forming Method
US Fed News Service, Including US State News;  April 10, 2007 ;     289 words ......which comprises forming a masking material layer on a surface of a working...volatile unit to thereby make the masking material layer porous, forming a resist layer on a surface of the masking material layer, patterning the resist...

Article: Cure for paint curing.(Brief Article)
Chemistry and Industry;  May 21, 2001 ;     176 words ......sophisticated is sometimes needed. Presently a masking material made from polypropylene is used to...come up with a solution for this. Its masking material uses heat-resistant engineering plastics...with a thermoplastic resin produces a masking material that is both heat resistant ...

Article: U.S., Singapore Inventors Develop Trench Isolation Structure
US Fed News Service, Including US State News;  October 23, 2007 ;     242 words ......Orlando, Fla., have developed a trench isolation structure. According to the U.S...The present invention provides a trench isolation structure, a method for manufacturing a trench isolation structure, and a method for manufacturing...

Article: Idaho Inventor Develops Trench Isolation Structure
US Fed News Service, Including US State News;  September 1, 2007 ;     240 words ......Jin of Boise, Idaho, has developed a trench isolation structure. According to the U.S. Patent...present invention discloses at least one trench isolation region formed in a semiconductor substrate...another active region. The at least one trench isolation region comprises a bottom ...

Article: California Inventors Develop Lithographic Contact Element
US Fed News Service, Including US State News;  November 5, 2007 ;     319 words ......the method includes applying a masking material over a first portion of a substrate, the masking material having an opening which will define...removing a first portion of the masking material. In this embodiment, at least a...

Article: Idaho Inventors Develop Selectively Doped Trench Isolation Device
US Fed News Service, Including US State News;  August 28, 2007 ;     249 words ......Yang of Boise, Idaho, have developed a trench isolation device. According to the U.S. Patent...Trademark Office: "A selectively doped trench isolation device is provided. The trench isolation device of the preferred embodiment...

Article: California Inventor Develops High-Voltage Transistor with U-Shaped Gate
US Fed News Service, Including US State News;  July 26, 2008 ;     265 words ......forming first, second, and third shallow trench isolation regions in a substrate, wherein the second shallow trench isolation region is situated between the first and the third shallow trench isolation regions. The second shallow trench isolation...

Article: Oregon Inventors Develop Shallow Trench Isolation Structure Forming Method
US Fed News Service, Including US State News;  February 21, 2007 ;     344 words ......developed a method for forming shallow trench isolation structure with deep oxide region...invention relates to a shallow trench isolation structure and a method for forming a shallow trench isolation structure on a semiconductor substrate...

Article: Wisconsin Inventor Develops Masking Machine
US Fed News Service, Including US State News;  January 29, 2007 ;     237 words ......accordance with the present invention, a masking material comprising a substrate and an adhesive...is provided. One or more strips of masking material are applied to a planar surface, and...applied over the one or more strips of masking material." The inventor was issued U.S. ...

Article: Taiwanese Inventors Develop Trench Isolation Structure
US Fed News Service, Including US State News;  December 30, 2006 ;     216 words ......Taoyuan, Taiwan, have developed a trench isolation structure and a method of forming...Patent & Trademark Office: "A trench isolation structure and a method of forming a trench isolation structure are provided. The method...

Article: Texas Inventors Develop Buffer Trench Isolation Structure Manufacturing Method
US Fed News Service, Including US State News;  January 10, 2007 ;     265 words ......developed a method of manufacture for a trench isolation structure with an implanted buffer...The present invention provides a trench isolation structure, a method of manufacture...released by the Patent Office, said: "The trench isolation structure, in one embodiment, includes...