Idaho Inventors Develop Trench Isolation Region Formation Method

US Fed News Service, Including US State News;  October 23, 2007 ;     319 words ......Idaho, have developed a trench isolation region formation method...methods of forming trench isolation regions. In one implementation, a masking material is formed over a semiconductor...Patent Office, said: "A trench isolation material is formed...trench and over the ...

U.S. Patents Awarded to Inventors in Idaho (Aug. 1)

Targeted News Service;  August 1, 2008 ;     700+ words ......Inventors Develop Trench Isolation Region Formation...Idaho, have developed trench isolation regions.According...methods of forming trench isolation regions. In one implementation, a masking material is formed over a...semiconductor substrate. The masking ...

SOI process uses hybrid trench isolation

Microwaves & RF;  February 1, 2002 ;     206 words ......SOI) technology that uses hybrid trench isolation and dual-gate oxides to create a...offers. Mitsubishi employs hybrid trench isolation to create a stable process. "Hybrid trench isolation is the combination of partial trench...

Michigan Inventors Develop Renewable Masking Surface Providing Method

US Fed News Service, Including US State News;  December 28, 2006 ;     274 words ......that includes a supply roll of masking material, supported by a first roll support...roll support, which allows the masking material to be dispensed. A take-up roll is provided to receive masking material after it has been used." An...

Japanese Inventors Develop Pattern Forming Method

US Fed News Service, Including US State News;  April 10, 2007 ;     289 words ......which comprises forming a masking material layer on a surface of a working...volatile unit to thereby make the masking material layer porous, forming a resist layer on a surface of the masking material layer, patterning the resist...

Cure for paint curing.(Brief Article)

Chemistry and Industry;  May 21, 2001 ;     176 words ......sophisticated is sometimes needed. Presently a masking material made from polypropylene is used to...come up with a solution for this. Its masking material uses heat-resistant engineering plastics...with a thermoplastic resin produces a masking material that is both heat resistant ...

U.S., Singapore Inventors Develop Trench Isolation Structure

US Fed News Service, Including US State News;  October 23, 2007 ;     242 words ......Orlando, Fla., have developed a trench isolation structure. According to the U.S...The present invention provides a trench isolation structure, a method for manufacturing a trench isolation structure, and a method for manufacturing...

Idaho Inventor Develops Trench Isolation Structure

US Fed News Service, Including US State News;  September 1, 2007 ;     240 words ......Jin of Boise, Idaho, has developed a trench isolation structure. According to the U.S. Patent...present invention discloses at least one trench isolation region formed in a semiconductor substrate...another active region. The at least one trench isolation region comprises a bottom ...

California Inventors Develop Lithographic Contact Element

US Fed News Service, Including US State News;  November 5, 2007 ;     319 words ......the method includes applying a masking material over a first portion of a substrate, the masking material having an opening which will define...removing a first portion of the masking material. In this embodiment, at least a...

Idaho Inventors Develop Selectively Doped Trench Isolation Device

US Fed News Service, Including US State News;  August 28, 2007 ;     249 words ......Yang of Boise, Idaho, have developed a trench isolation device. According to the U.S. Patent...Trademark Office: "A selectively doped trench isolation device is provided. The trench isolation device of the preferred embodiment...

California Inventor Develops High-Voltage Transistor with U-Shaped Gate

US Fed News Service, Including US State News;  July 26, 2008 ;     265 words ......forming first, second, and third shallow trench isolation regions in a substrate, wherein the second shallow trench isolation region is situated between the first and the third shallow trench isolation regions. The second shallow trench isolation...

Oregon Inventors Develop Shallow Trench Isolation Structure Forming Method

US Fed News Service, Including US State News;  February 21, 2007 ;     344 words ......developed a method for forming shallow trench isolation structure with deep oxide region...invention relates to a shallow trench isolation structure and a method for forming a shallow trench isolation structure on a semiconductor substrate...

Wisconsin Inventor Develops Masking Machine

US Fed News Service, Including US State News;  January 29, 2007 ;     237 words ......accordance with the present invention, a masking material comprising a substrate and an adhesive...is provided. One or more strips of masking material are applied to a planar surface, and...applied over the one or more strips of masking material." The inventor was issued U.S. ...

Taiwanese Inventors Develop Trench Isolation Structure

US Fed News Service, Including US State News;  December 30, 2006 ;     216 words ......Taoyuan, Taiwan, have developed a trench isolation structure and a method of forming...Patent & Trademark Office: "A trench isolation structure and a method of forming a trench isolation structure are provided. The method...

Texas Inventors Develop Buffer Trench Isolation Structure Manufacturing...

US Fed News Service, Including US State News;  January 10, 2007 ;     265 words ......developed a method of manufacture for a trench isolation structure with an implanted buffer...The present invention provides a trench isolation structure, a method of manufacture...released by the Patent Office, said: "The trench isolation structure, in one embodiment, includes...