Article: Japanese Inventor Develops Susceptor

ALEXANDRIA, Va., Sept. 27 -- Masanari Yokogawa of Niigata, Japan, has developed a susceptor for semiconductor wafers.

According to a description of the invention, released by the U.S. Patent & Trademark Office: "The invention relates to a susceptor, in particular, a susceptor in which a SiC film formed on a wafer pocket is partially left without polishing so as to be a SiC grain growth surface portion."

The inventor was issued U.S. Patent No. 7,393,418 on July 1.

The patent has been assigned to Covalent Materials Corp., Tokyo.

The original application was filed on Sept. 22, 2005, and is available at: ...

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