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Article: WIPO: Inventors in Japan Develop Semiconductor Device Production Method
- Article from:
- US Fed News Service, Including US State News
- Article date:
- November 18, 2008
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GENEVA, Nov. 18 - Manabu Sakamoto, Naoki Idani, Toshiyuki Karasawa, Toshiyuki Isome, Ade Asneil Akbar, Tetsuya Shirasu, Fumihiko Akaboshi, Satoshi Takesako and Tsuyoshi Kanki, all from Kanagawa, Japan, have developed a wiring layer generation system.
According to an abstract posted by the World Intellectual Property Organization, the invention shows it posible to "suppress exfoliation of a low-dielectric film in a chip multi-processor step when using the low-dielectric film as an interlayer insulation film."
The invention carries International Patent Publication No. WO/2008/120323 on Oct. 9.
The patent has been ...
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