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Article: Patent No. 07602030 Issued on Oct. 13, Assigned to Micron Technology, Inc. for Hafnium tantalum oxide dielectrics
- Article from:
- US Fed News Service, Including US State News
- Article date:
- October 15, 2009
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ALEXANDRIA, Va., Sept. 15 -- Kie Y. Ahn, Leonard Forbes, all of Chappaqua, OR, have developed a Hafnium tantalum oxide dielectrics .The inventors were issued U.S. Patent No. 07602030 on Oct. 13.
The patent has been assigned Micron Technology, Inc., Boise.
According to the abstract released by the U.S. Patent & Trademark Office: A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a ...