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Article: Patent No. 07602032 Issued on Oct. 13, Assigned to Altis Semiconductor SNC for Memory having cap structure for magnetoresistive junction and method for structuring the same
- Article from:
- US Fed News Service, Including US State News
- Article date:
- October 15, 2009
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ALEXANDRIA, Va., Sept. 15 -- Ulrich KlostermannChanro Park, Wolfgang Raberg, all of Fontainebleau, FR, have developed a Memory having cap structure for magnetoresistive junction and method for structuring the same .The inventors were issued U.S. Patent No. 07602032 on Oct. 13.
The patent has been assigned Altis Semiconductor SNC, Corbeil Essonnes Cedex.
According to the abstract released by the U.S. Patent & Trademark Office: A memory and method of making a memory is disclosed. In one embodiment, the memory includes a cap structure for a magnetoresistive random access memory device including an etch stop layer formed over an upper magnetic layer of a ...