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Article: Patent No. 7,605,425 Issued on Oct. 20, Assigned to Alpha & Omega Semiconductor for Power Mos Device (California Inventors)
- Article from:
- US Fed News Service, Including US State News
- Article date:
- October 24, 2009
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ALEXANDRIA, Va., Oct. 28 -- Anup Bhalla of Santa Clara, Calif., Sik Lui of Sunnyvale, Calif., and Tiesheng Li of San Jose, Calif., have developed a power mos device. The inventors were issued U.S. Patent No. 7,605,425 on Oct. 20.
The patent has been assigned to Alpha & Omega Semiconductor Ltd., Hamilton, Bermuda.
According to the abstract released by the U.S. Patent & Trademark Office: "A semiconductor device comprises a drain, a body disposed over the drain, having a body top surface, a source embedded in the body, extending downward from the body top surface into the body, a gate trench extending through the source and ...
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Article: ALPHA & OMEGA SEMICONDUCTOR EXTENDS HIGH VOLTAGE ...
AsiaPulse News;
January 15, 2009 ;
700+ words
... ... BW)(CA-AOS) Alpha & Omega Semiconductor Extends High Voltage MOSFET Offering ... Jan. 14, 2009-- Alpha & Omega Semiconductor, Inc. (AOS) today announced ... pricing. About AOS Alpha & Omega Semiconductor, Inc. is a fabless semiconductor ...
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