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Article: Patent No. 7,608,526 Issued on Oct. 27, Assigned to ASM America, S.O.I. Tec Silicon On Insulator Technologies, S.A. for Strained Layers (U.S., French Inventors)
- Article from:
- US Fed News Service, Including US State News
- Article date:
- November 4, 2009
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ALEXANDRIA, Va., Nov. 4 -- Christophe Figuet and Mark Kennard, both of Crolles, France, Nyles W. Cody of Tempe, Ariz., have developed a strained layers within semiconductor buffer structures. The inventors were issued U.S. Patent No. 7,608,526 on Oct. 27.
The patent has been assigned to ASM America Inc., Phoenix, and S.O.I. Tec Silicon On Insulator Technologies S.A., Bernin, France.
According to the abstract released by the U.S. Patent & Trademark Office: "A semiconductor workpiece including a substrate, a relaxed buffer layer including a graded portion formed on the substrate, and at least one strained transitional layer within the graded portion of the relaxed buffer layer and method ...
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Article: Publication No. WO/2009/118374 Published on Oct. 1, Assigned to ...
US Fed News Service, Including US State News;
October 5, 2009 ;
407 words
... ... have developed a controlled temperature implantation. The patent has been assigned to S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES, Bernin, France. According to an abstract posted by the World Intellectual Property Organization ...
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