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Article: Patent No. 7,611,945 Issued on Nov. 3, Assigned to Semiconductor Manufacturing International for Dram Capacitor Structure Fabrication Method (Chinese Inventor)
- Article from:
- US Fed News Service, Including US State News
- Article date:
- November 4, 2009
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ALEXANDRIA, Va., Nov. 7 -- Jeong Gi Kim, Shanghai, China, has developed a method for fabricating dram capacitor structure. The inventor was issued U.S. Patent No. 7,611,945 on Nov. 3.
The patent has been assigned to Semiconductor Manufacturing International (Shanghai) Corp., Shanghai.
According to the abstract released by the U.S. Patent & Trademark Office: "A method for forming a capacitor structure for a dynamic random access memory device. The method includes forming a device layer overlying a semiconductor substrate, e.g., silicon wafer. The method includes forming a first interlayer dielectric overlying the device layer and forming a via structure within the first interlayer ...