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Article: Patent No. 7,611,977 Issued on Nov. 3, Assigned to CSI Cells for Phosphorus Diffusion Process (Chinese Inventors)
- Article from:
- US Fed News Service, Including US State News
- Article date:
- November 4, 2009
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ALEXANDRIA, Va., Nov. 7 -- Lingjun Zhang and Yunxiang Zuo, both of Suzhou, China, have developed a process for phosphorus diffusion. The inventors were issued U.S. Patent No. 7,611,977 on Nov. 3.
The patent has been assigned to CSI Cells Co. Ltd., Jiangsu Province, China.
According to the abstract released by the U.S. Patent & Trademark Office: "This invention discloses a process of phosphorus diffusion for manufacturing solar cell, comprising annealing a mono-crystalline silicon wafer in a nitrogen atmosphere at 900-950degree C. for twenty to thirty minutes, carrying oxidation treatment in a hydrogen chloride atmosphere at 850-1050degree C. to form a 10 to 30 nm thick oxide layer on ...