Article: Patent No. 7,615,438 Issued on Nov. 10, Assigned to Micron Technology for Lanthanide Yttrium Aluminum Oxide Dielectric Film (Oregon, New York Inventors)

ALEXANDRIA, Va., Nov. 11 -- Leonard Forbes of Corvallis, Ore., and Kie Y. Ahn of Chappaqua, N.Y., have developed a lanthanide yttrium aluminum oxide dielectric film. The inventors were issued U.S. Patent No. 7,615,438 on Nov. 10.

The patent has been assigned to Micron Technology Inc., Boise, Idaho.

According to the abstract released by the U.S. Patent & Trademark Office: "Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a variety of electronic systems. The lanthanide yttrium ...

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