To export this article to Microsoft Word, please log in or subscribe.
Have an account? Please log in
Not a subscriber? Sign up today
"Low noise L-Band GaAs HJ-FETS.(INTEGRATED CIRCUITS)." ECN-Electronic Component News. Advantage Business Media. 2006. HighBeam Research. 26 Apr. 2018 <https://www.highbeam.com>.
"Low noise L-Band GaAs HJ-FETS.(INTEGRATED CIRCUITS)." ECN-Electronic Component News. 2006. HighBeam Research. (April 26, 2018). https://www.highbeam.com/doc/1G1-142874880.html
"Low noise L-Band GaAs HJ-FETS.(INTEGRATED CIRCUITS)." ECN-Electronic Component News. Advantage Business Media. 2006. Retrieved April 26, 2018 from HighBeam Research: https://www.highbeam.com/doc/1G1-142874880.html
California Eastern Laboratories has announced the availability of two GaAs HJ-FETs from NEC. Designed for use as LNAs and driver amplifiers in satellite radio antennae, GPS antennae and other L-Band applications, the NE3508M04 and NE3509M04 provide low noise and high associated gain. Appropriate for use as a first stage amplifier, the NE3509M04 features a 0. …
Wireless Design & Development; February 1, 2006
Browse back issues from our extensive library of more than 6,500 trusted publications.
HighBeam Research is operated by Cengage Learning. © Copyright 2018. All rights reserved.
The HighBeam advertising network includes: womensforum.com GlamFamily