Low noise L-Band GaAs HJ-FETS.(INTEGRATED CIRCUITS)
California Eastern Laboratories has announced the availability of two GaAs HJ-FETs from NEC. Designed for use as LNAs and driver amplifiers in satellite radio antennae, GPS antennae and other L-Band applications, the NE3508M04 and NE3509M04 provide low noise and high associated gain. Appropriate for use as a first stage amplifier, the NE3509M04 features a 0. …
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