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E-pHEMT FET for wireless infrastructure. (Microwave & RF Components).

March 1, 2003 | Copyright

At 2 GHz, Agilent's single-voltage operation ATF E-pHEMT (enhancement-mode pseudomorphic high electron mobility transistor) FET (field effect transistor) features +30 dBm output power at 1 dB gain compression, +41.7 dBm third-order output intercept point (OIP3), 69 percent power-added efficiency, a noise figure of 1.4 dB and 4.5V operation. …

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