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"E-pHEMT FET for wireless infrastructure. (Microwave & RF Components)." ECN-Electronic Component News. Advantage Business Media. 2003. HighBeam Research. 24 Apr. 2018 <https://www.highbeam.com>.
"E-pHEMT FET for wireless infrastructure. (Microwave & RF Components)." ECN-Electronic Component News. 2003. HighBeam Research. (April 24, 2018). https://www.highbeam.com/doc/1G1-98880598.html
"E-pHEMT FET for wireless infrastructure. (Microwave & RF Components)." ECN-Electronic Component News. Advantage Business Media. 2003. Retrieved April 24, 2018 from HighBeam Research: https://www.highbeam.com/doc/1G1-98880598.html
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At 2 GHz, Agilent's single-voltage operation ATF E-pHEMT (enhancement-mode pseudomorphic high electron mobility transistor) FET (field effect transistor) features +30 dBm output power at 1 dB gain compression, +41.7 dBm third-order output intercept point (OIP3), 69 percent power-added efficiency, a noise figure of 1.4 dB and 4.5V operation. …
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