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Home » Publications » Industry magazines » Engineering magazines » ECN-Electronic Component News » March 2003 »
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    MLA

    "E-pHEMT FET for wireless infrastructure. (Microwave & RF Components)." ECN-Electronic Component News. Advantage Business Media. 2003. HighBeam Research. 24 Apr. 2018 <https://www.highbeam.com>.

    Chicago

    "E-pHEMT FET for wireless infrastructure. (Microwave & RF Components)." ECN-Electronic Component News. 2003. HighBeam Research. (April 24, 2018). https://www.highbeam.com/doc/1G1-98880598.html

    APA

    "E-pHEMT FET for wireless infrastructure. (Microwave & RF Components)." ECN-Electronic Component News. Advantage Business Media. 2003. Retrieved April 24, 2018 from HighBeam Research: https://www.highbeam.com/doc/1G1-98880598.html

    Please use HighBeam citations as a starting point only. Not all required citation information is available for every article, and citation requirements change over time.

E-pHEMT FET for wireless infrastructure. (Microwave & RF Components).

ECN-Electronic Component News
ECN-Electronic Component News

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March 1, 2003 | Copyright
COPYRIGHT 2009 Advantage Business Media. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights or concerns about this content should be directed to Customer Service.
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    <a href="https://www.highbeam.com/doc/1G1-98880598.html" title="E-pHEMT FET for wireless infrastructure. (Microwave & RF Components). | HighBeam Research">E-pHEMT FET for wireless infrastructure. (Microwave & RF Components).</a>

At 2 GHz, Agilent's single-voltage operation ATF E-pHEMT (enhancement-mode pseudomorphic high electron mobility transistor) FET (field effect transistor) features +30 dBm output power at 1 dB gain compression, +41.7 dBm third-order output intercept point (OIP3), 69 percent power-added efficiency, a noise figure of 1.4 dB and 4.5V operation. …


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